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If process temperatures are between −200 and 500 °C (−328.0 and 932.0 °F), an industrial RTD is the preferred option. Thermocouples have a range of −180 to 2,320 °C (−292.0 to 4,208.0 °F), [ 9 ] so for temperatures above 500 °C (932 °F) it is the contact temperature measurement device commonly found in physics laboratories.
The Callendar–Van Dusen equation is an equation that describes the relationship between resistance (R) and temperature (T) of platinum resistance thermometers (RTD). As commonly used for commercial applications of RTD thermometers, the relationship between resistance and temperature is given by the following equations.
A minimum detectable signal is a signal at the input of a system whose power allows it to be detected over the background electronic noise of the detector system. It can alternately be defined as a signal that produces a signal-to-noise ratio of a given value m at the output.
RTD may refer to: Science and technology. Real-time data; Residence time distribution; Resonant-tunneling diode; Round-trip delay time, in telecommunications;
PT100 or PT-100 may refer to: A type of the Taurus PT92 pistol; A type of resistance thermometer; Panzerfaust, a German anti-tank weapon of World War II
A PTC thermistor attached in series with each device can assure the current is divided reasonably evenly between the devices. In crystal oscillators for temperature compensation, medical equipment temperature control, and industrial automation, silicon PTC thermistors display a nearly linear positive temperature coefficient (0.7%/°C).
The simple relationship between the temperature difference of the junctions and the measurement voltage is only correct if each wire is homogeneous (uniform in composition). As thermocouples age in a process, their conductors can lose homogeneity due to chemical and metallurgical changes caused by extreme or prolonged exposure to high temperatures.
An RTD can be fabricated using many different types of materials (such as III–V, type IV, II–VI semiconductor) and different types of resonant tunneling structures, such as the heavily doped p–n junction in Esaki diodes, double barrier, triple barrier, quantum well, or quantum wire.