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The temperature of the eutectic bonding procedure is dependent on the used material. The bonding happens at a specific weight-% and temperature, e.g. 370 °C at 2.85 wt-% Si for Au intermediate layer (compare to phase diagram). [5] The procedure of eutectic bonding is divided into following steps: [11] Substrate processing
The general composition is M n Si or MSi n with n ranging from ... whose phase diagram with silicon is a simple eutectic ... is tetrahedral and the bonding mode ...
Adhesive bonding using a BCB intermediate layer is a possible method for packaging and sealing of MEMS devices, also structured Si wafers. Its use is specified for applications that does not require hermetic sealing, i.e. MOEMS mirror arrays, RF MEMS switches and tunable capacitors.
A eutectic system or eutectic mixture (/ j uː ˈ t ɛ k t ɪ k / yoo-TEK-tik) [1] is a type of a homogeneous mixture that has a melting point lower than those of the constituents. [2] The lowest possible melting point over all of the mixing ratios of the constituents is called the eutectic temperature .
Direct bonding, or fusion bonding, is a wafer bonding process without any additional intermediate layers. It is based on chemical bonds between two surfaces of any material possible meeting numerous requirements. [ 1 ]
Thus the Si–F bond is significantly stronger than even the C–F bond and is one of the strongest single bonds, while the Si–H bond is much weaker than the C–H bond and is readily broken. Furthermore, the ability of silicon to expand its octet is not shared by carbon, and hence some organosilicon reactions have no organic analogues.
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Aluminum forms a eutectic with silicon, which is at 577 °C, with a Si content of 12.5% [7] or 12.6%. [8] Up to 1.65% Si can be dissolved in aluminum at this temperature. However, the solubility decreases rapidly with temperature. At 500 °C it is still 0.8% Si, at 400 °C 0.3% Si and at 250 °C only 0.05% Si.