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Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Universal memory refers to a computer data storage device combining the cost benefits of DRAM, the speed of SRAM, the non-volatility of flash memory along with infinite durability, and longevity. Such a device, if it ever becomes possible to develop, would have a far-reaching impact on the computer market.
The Thyristor-RAM provides the best density / performance ratio available between the various integrated memories, matching the performance of an SRAM memory, but allowing 2-3 times greater storage density and lower power consumption. It is expected that the new generation of T-RAM memory will have the same storage density as DRAMs.
SRAM (Static random-access memory) – This stores each bit of data in a circuit called a flip-flop, made of 4 to 6 transistors. SRAM is less dense and more expensive per bit than DRAM, but faster and does not require memory refresh. It is used for smaller cache memories in computers.
CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24] In 1978, Hitachi introduced the twin-well CMOS process, with its HM6147 (4 kb SRAM) memory chip, manufactured with a 3 μm process. The ...
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory . [ 2 ]