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For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
A sudden fail-open fault can cause multiple secondary failures if it is fast and the circuit contains an inductance; this causes large voltage spikes, which may exceed 500 volts. A broken metallisation on a chip may thus cause secondary overvoltage damage. [1] Thermal runaway can cause sudden failures including melting, fire or explosions.
An inrush current limiter is a device or devices combination used to limit inrush current. Passive resistive components such as resistors (with power dissipation drawback), or negative temperature coefficient (NTC) thermistors are simple options while the positive one (PTC) is used to limit max current afterward as the circuit has been operating (with cool-down time drawback on both).
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips.
The bipolar LMV431 by Texas Instruments has a V REF of 1.24 V and is capable of regulating voltages up to 30 V at currents from 80 μA to 30 mA; [55] [56] The low-voltage CMOS NCP100 by ON Semiconductor has a V REF of 0.7 V and is capable of regulating voltages up to 6 V at currents from 100 μA to 20 mA. [57] [58]
The surge is defined by the Combination Wave Generator's open-circuit voltage and short-circuit current waveforms, characterized by front time, duration, and peak values. With an open circuit output, the surge voltage is a double exponential pulse in the form of k ( e − α t − e − β t ) {\displaystyle k(e^{-\alpha t}-e^{-\beta t})} .
The former first lady was notably absent from President Jimmy Carter's state funeral service, leading Barack Obama and Donald Trump to be seated next to one another
As in the case of the bipolar transistor version of this circuit, the output impedance is much larger than it would be for the standard two-transistor current mirror. Since r O 4 {\displaystyle \scriptstyle r_{O4}} would be the same as the output impedance of the standard mirror, the ratio of the two is 2 + g m 4 r O 1 {\displaystyle ...