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Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction. This causes local heating, progressing into a short between collector and emitter.
A resistor removed from a high voltage tube circuit shows damage from voltaic arcing on the resistive metal oxide layer. Resistors can fail open or short, alongside their value changing under environmental conditions and outside performance limits. Examples of resistor failures include: Manufacturing defects causing intermittent problems.
One style of current limiting circuit is shown in the image. The schematic represents a simple protection mechanism used in regulated DC supplies and class-AB power amplifiers. Q1 is the pass or output transistor. R sens is the load current sensing device. Q2 is the protection transistor which turns on as soon as the voltage across R sens ...
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips.
A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond, but in a practical circuit the inductance of the wires leading to the device imposes a higher limit. This makes transient ...
In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low-impedance path between the power supply rails of a MOSFET circuit, triggering a parasitic structure which disrupts proper functioning of the part, possibly even leading to its destruction due to overcurrent.
Wafer testing is a step performed during semiconductor device fabrication after back end of line (BEOL) and before IC packaging.. Two types of testing are typically done. Very basic wafer parametric tests (WPT) are performed at a few locations on each wafer to ensure the wafer fabrication process has been carried out successfully.
To test the lack of latch-up, the prototype 1200 V IGBTs were directly connected without any loads across a 600 V constant-voltage source and were switched on for 25 microseconds. The entire 600 V was dropped across the device, and a large short-circuit current flowed. The devices successfully withstood this severe condition.