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In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts ) between the top of the valence band and the ...
Energy band gaps can be classified using the wavevectors of the states surrounding the band gap: Direct band gap: the lowest-energy state above the band gap has the same k as the highest-energy state beneath the band gap. Indirect band gap: the closest states above and beneath the band gap do not have the same k value.
When used with a spectroscopic reflectometry tool, the Forouhi–Bloomer dispersion equations specify n and k for amorphous and crystalline materials as a function of photon energy E. Values of n and k as a function of photon energy, E , are referred to as the spectra of n and k , which can also be expressed as functions of the wavelength of ...
The Brus equation or confinement energy equation can be used to describe the emission energy of quantum dot semiconductor nanocrystals in terms of the band gap energy E gap, the Planck constant h, the radius of the quantum dot r, as well as the effective mass of the excited electron m e * and of the excited hole m h *.
In solid-state physics, an energy gap or band gap is an energy range in a solid where no electron states exist, i.e. an energy range where the density of states vanishes. Especially in condensed matter physics , an energy gap is often known more abstractly as a spectral gap , a term which need not be specific to electrons or solids.
Typically, a Tauc plot shows the quantity hν (the photon energy) on the abscissa (x-coordinate) and the quantity (αhν) 1/2 on the ordinate (y-coordinate), where α is the absorption coefficient of the material. Thus, extrapolating this linear region to the abscissa yields the energy of the optical bandgap of the amorphous material.
Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). [1]