Search results
Results From The WOW.Com Content Network
Indium gallium zinc oxide (IGZO) is a crystalline semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), with a unique atomic arrangement that ensures stable performance. This unique crystalline structure enhances picture resolution and supports compatibility with diverse display technologies, contributing ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [7] [8] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [9] and described in a 1952 publication. [10]
These include cadmium selenide, [6] [7] metal oxides such as indium gallium zinc oxide (IGZO) or zinc oxide, [8] organic semiconductors, [9] carbon nanotubes, [10] or metal halide perovskites. [11] Cross sectional diagram of 4 common thin film transistor structures
Cobalt oxide nanoparticle; Coherent effects in semiconductor optics; Copper indium gallium selenide; Copper zinc antimony sulfide; Copper(I) iodide; Copper(I) oxide; Copper(I) thiocyanate; Copper(II) chloride; Copper(II) oxide
Low-temperature polycrystalline oxide (LTPO) is a type of OLED display backplane technology developed by Apple that combines LTPS TFTs and oxide TFTs (indium gallium zinc oxide, or IGZO). In LTPO, the switching circuits use LTPS while the driving TFTs use IGZO materials. [ 17 ]
It wasn't until the early 2000's that Hideo Hosono, who was studying transparent conducting oxides, [2] discovered that oxysulfides [3] and indium gallium zinc oxide [4] [5] could be used as semiconductors in TFTs. Soon after, John Wager at Oregon State University reported oxide TFTs employing the binary oxide zinc oxide as the semiconductor. [6]
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V ...