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Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process. It involves using a liquid medium, typically water, between the lens and the wafer during exposure.
This method, called immersion lithography, is the current cutting edge of practical production technology. It works because numerical aperture is a function of the maximum angle of light that can enter the lens and the refractive index of the medium through which the light passes. When water is employed as the medium, it greatly increases ...
High-index immersion lithography is the newest extension of 193 nm lithography to be considered. In 2006, features less than 30 nm were demonstrated by IBM using this technique. [72] These systems used CaF 2 calcium fluoride lenses. [73] [74] Immersion lithography at 157 nm was explored. [75]
For grid location patterning, a single DUV exposure following grid formation also has the cost and maturity advantages (e.g., immersion lithography may not even be necessary for the spacer patterning in some cases) and no stochastic concerns associated with EUV.
Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.
The emergence of immersion lithography has a strong impact on photomask requirements. The commonly used attenuated phase-shifting mask is more sensitive to the higher incidence angles applied in "hyper-NA" lithography, due to the longer optical path through the patterned film. [15]
In June 2006, Texas Instruments debuted a 0.24-square-micrometre 45 nm SRAM cell, with the help of immersion lithography. In November 2006, UMC announced that it had developed a 45 nm SRAM chip with a cell size of less than 0.25-square-micrometre using immersion lithography and low-κ dielectrics. In 2006, Samsung developed a 40 nm process. [3]
The test chips had a cell size of 0.182 μm 2, used a second-generation high-κ gate dielectric and metal gate, and contained almost two billion transistors. 193 nm immersion lithography was used for the critical layers, while 193 nm or 248 nm dry lithography was used on less critical layers. The critical pitch was 112.5 nm.