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Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process. It involves using a liquid medium, typically water, between the lens and the wafer during exposure.
High-index immersion lithography is the newest extension of 193 nm lithography to be considered. In 2006, features less than 30 nm were demonstrated by IBM using this technique. [72] These systems used CaF 2 calcium fluoride lenses. [73] [74] Immersion lithography at 157 nm was explored. [75]
Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.
This method, called immersion lithography, is the current cutting edge of practical production technology. It works because numerical aperture is a function of the maximum angle of light that can enter the lens and the refractive index of the medium through which the light passes. When water is employed as the medium, it greatly increases ...
For grid location patterning, a single DUV exposure following grid formation also has the cost and maturity advantages (e.g., immersion lithography may not even be necessary for the spacer patterning in some cases) and no stochastic concerns associated with EUV.
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The emergence of immersion lithography has a strong impact on photomask requirements. The commonly used attenuated phase-shifting mask is more sensitive to the higher incidence angles applied in "hyper-NA" lithography, due to the longer optical path through the patterned film. [15]
U.S. President Donald Trump stripped Secret Service protection on Tuesday from his former national security adviser, John Bolton, who became the target of an alleged Iranian murder plot after he ...