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Reverse bias: Although the LED is based on a diode junction and is nominally a rectifier, the reverse-breakdown mode for some types can occur at very low voltages and essentially any excess reverse bias can cause immediate degradation, and may lead to vastly accelerated failure. 5 V is a typical maximum reverse bias voltage specification for ...
An LED begins to emit light when more than 2 or 3 volts is applied in the forward direction. The reverse bias region uses a different vertical scale from the forward bias region to show that the leakage current is nearly constant with voltage until breakdown occurs. In forward bias, the current starts small but increases exponentially with voltage.
Some semiconductor devices are diode junction-based and are nominally rectifiers; however, the reverse-breakdown mode may be at a very low voltage, with a moderate reverse bias voltage causing immediate degradation and vastly accelerated failure. 5 V is a maximum reverse-bias voltage for typical LEDs, with some types having lower figures.
The reverse breakdown voltage is sufficiently high that the emitted wavelength cannot be similar enough to still be visible. Though dual-LED packages exist that contain a different color LED in each direction, it is not expected that any single LED element can emit visible light when reverse-biased. [citation needed] It is not known if any ...
LEDs can be operated with alternating current, but they will only light on the half of the AC cycle where the LED is forward-biased. This causes the LED to turn on and off at the frequency of the AC supply. Most LEDs have relatively low reverse breakdown voltage ratings compared to standard diodes, so it may be easier than expected to enter ...
Under zero- or reverse-bias (the "off" state), a PIN diode has a low capacitance. The low capacitance will not pass much of an RF signal. Under a forward bias of 1 mA (the "on" state), a typical PIN diode will have an RF resistance of about 1 ohm, making it a good conductor of RF. Consequently, the PIN diode makes a good RF switch.
The reverse bias safe operating area (or RBSOA) is the SOA during the brief time before turning the device into the off state—during the short time when the base current bias is reversed. As long as the collector voltage and collector current stay within the RBSOA during the entire turnoff, the transistor will be undamaged.
A standard silicon APD typically can sustain 100–200 V of reverse bias before breakdown, leading to a gain factor of around 100. However, by employing alternative doping and bevelling (structural) techniques compared to traditional APDs, a it is possible to create designs where greater voltage can be applied (> 1500 V) before breakdown is ...