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New York: The International Nickel Company, Inc., 1941: 16. — "Values ranging from 21.3 to 21.5 gm/cm 3 at 20 °C have been reported for the density of annealed platinum; the best value being about 21.45 gm/cm 3 at 20 °C." 21.46 g/cm 3 — Rose, T. Kirke. The Precious Metals, Comprising Gold, Silver and Platinum.
Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si. 3N. 4 (Trisilicon tetranitride) is the most thermodynamically stable and commercially important of the silicon nitrides, [6] and the term ″ Silicon nitride ″ commonly refers to this specific composition.
The dimeric silicon dioxide, (SiO 2) 2 has been obtained by reacting O 2 with matrix isolated dimeric silicon monoxide, (Si 2 O 2). In dimeric silicon dioxide there are two oxygen atoms bridging between the silicon atoms with an Si–O–Si angle of 94° and bond length of 164.6 pm and the terminal Si–O bond length is 150.2 pm.
Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive.
Charge carrier density. Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density ...
Thermal oxidation of silicon is usually performed at a temperature between 800 and 1200 °C, resulting in so called High Temperature Oxide layer (HTO). It may use either water vapor (usually UHP steam ) or molecular oxygen as the oxidant; it is consequently called either wet or dry oxidation.
In energy storage and fuels. For energy storage, the energy density relates the stored energy to the volume of the storage equipment, e.g. the fuel tank. The higher the energy density of the fuel, the more energy may be stored or transported for the same amount of volume. The energy of a fuel per unit mass is called its specific energy.
Silicon carbide is used as an abrasive, as well as a semiconductor and diamond simulant of gem quality. The simplest process to manufacture silicon carbide is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F).