Search results
Results From The WOW.Com Content Network
For example, I–V data can be used to study anomalies, locate maximum or minimum curve slopes, and perform reliability analyses. A typical application is finding a semiconductor diode's reverse bias leakage current and doing forward and reverse bias voltage sweeps and current measurements to generate its I–V curve. [3]
Binding selectivity describes how a ligand may bind more preferentially to one receptor than another. A selectivity coefficient is the equilibrium constant for the reaction of displacement by one ligand of another ligand in a complex with the substrate. Binding selectivity is of major importance in biochemistry [1] and in chemical separation ...
In this mode, electrons are injected from the forward biased n-type emitter region into the p-type base where they diffuse as minority carriers to the reverse-biased n-type collector and are swept away by the electric field in the reverse-biased collector–base junction. For an illustration of forward and reverse bias, see semiconductor diodes.
A graphical representation of the current and voltage properties of a transistor; the bias is selected so that the operating point permits maximum signal amplitude without distortion. In electronics , biasing is the setting of DC ( direct current ) operating conditions (current and voltage) of an electronic component that processes time-varying ...
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
Nonideal p–n diode current-voltage characteristics. The ideal diode has zero resistance for the forward bias polarity, and infinite resistance (conducts zero current) for the reverse voltage polarity; if connected in an alternating current circuit, the semiconductor diode acts as an electrical rectifier.
PN junction operation in forward-bias mode, showing reducing depletion width. In forward bias, the p-type is connected with a positive electrical terminal and the n-type is connected with a negative terminal. The panels show energy band diagram, electric field, and net charge density. The built-in potential of the semiconductor varies ...
When a forward bias is applied to the p-n junction of the diode the band gap in the depletion region is narrowed. The applied voltage introduces more charge carriers as well, which are able to diffuse across the depletion region. Under a reverse bias this is hardly possible because the band gap is widened instead of narrowed, thus no current ...