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The alloy can be reacted with water to form hydrogen gas(H2), aluminum hydroxide and gallium metal. [2] Normally, aluminum does not react with water, since it quickly reacts in air to form a passivation layer of aluminum oxide. AlGa alloy is able to create aluminum nanoparticles for the hydrogen producing reaction.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
Aluminium gallium arsenide (also gallium aluminium arsenide) (Al x Ga 1−x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs .
Aluminium gallium antimonide, also known as gallium aluminium antimonide or AlGaSb (Al x Ga 1-x Sb), is a ternary III-V semiconductor compound. It can be considered as an alloy between aluminium antimonide and gallium antimonide. The alloy can contain any ratio between aluminium and gallium. AlGaSb refers generally to any composition of the alloy.
Gallium-70 can decay through both beta minus decay and electron capture. Gallium-67 is unique among the light isotopes in having only electron capture as a decay mode, as its decay energy is not sufficient to allow positron emission. [31] Gallium-67 and gallium-68 (half-life 67.7 min) are both used in nuclear medicine.
Aluminium arsenide (Al As) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. (AlAs) can form a superlattice with gallium arsenide ( Ga As) which results in its semiconductor properties. [ 3 ]
Aluminium gallium indium phosphide (Al Ga In P, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies. [1]