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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Pure semiconductors that have been altered by the presence of dopants are known as extrinsic semiconductors (see intrinsic semiconductor). Dopants are introduced into semiconductors in a variety of techniques: solid sources, gases, spin on liquid, and ion implanting. See ion implantation, surface diffusion, and solid sources footnote.
Semiconductor doping with boron, phosphorus, or arsenic is a common application of ion implantation. When implanted in a semiconductor, each dopant atom can create a charge carrier in the semiconductor after annealing. A hole can be created for a p-type dopant, and an electron for an n-type dopant. This modifies the conductivity of the ...
Dopant activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. [1] The term is often restricted to the application of thermal energy following the ion implantation of dopants.
Gas immersion laser doping (GILD) is a method of doping a semiconductor material such as silicon. In the case of doping silicon with boron to create a P-type semiconductor material, a thin wafer of silicon is placed in a containment chamber and is immersed in boron gas.
This is observed for a degenerate electron distribution such as that found in some degenerate semiconductors and is known as a Moss–Burstein shift. [1] [2] The effect occurs when the electron carrier concentration exceeds the conduction band edge density of states, which corresponds to degenerate doping in semiconductors.
Monolayer doping (MLD) in semiconductor production is a well controlled, wafer-scale surface doping technique first developed at the University of California, Berkeley, in 2007. [1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially at nanoscale , which is not easily obtained by other ...
In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region. Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons , is to be doped as a n-type semiconductor , elements from group V like phosphorus (P) or arsenic ...