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Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
Morgan Sparks made the bipolar junction transistor into a practical device. [47] [48] These were also licensed to a number of other electronics companies, including Texas Instruments, who produced a limited run of transistor radios as a sales tool. Early transistors were chemically unstable and only suitable for low-power, low-frequency ...
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters . The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be ...
An NPN grown-junction transistor with the cover removed to show the germanium ingot and the base wire. The grown-junction transistor was the first type of bipolar junction transistor made. [1] It was invented by William Shockley at Bell Labs on June 23, 1948 [2] (patent filed June 26, 1948), six months after the first bipolar point-contact ...
The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation .
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy-junction and grown junction processes for making bipolar junction transistors (BJTs). Bell Labs developed the first prototype diffused junction bipolar transistors in 1954. [1]
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .