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Critical performance parameters of a photodiode include spectral responsivity, dark current, response time and noise-equivalent power. Spectral responsivity The spectral responsivity is a ratio of the generated photocurrent to incident light power, expressed in A / W when used in photoconductive mode.
An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization.
Shot noise or Poisson noise is a type of noise which can be modeled by a Poisson process. In electronics shot noise originates from the discrete nature of electric charge . Shot noise also occurs in photon counting in optical devices, where shot noise is associated with the particle nature of light.
Commercial single-photon avalanche diode module for optical photons. A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode [1] (G-APD or GM-APD [2]) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours.
The PIN photodiode was invented by Jun-ichi Nishizawa and his colleagues in 1950. [4] PIN photodiodes are used in fibre optic network cards and switches. As a photodetector, the PIN diode is reverse-biased. Under reverse bias, the diode ordinarily does not conduct (save a small dark current or I s leakage).
The primary remaining source of noise is photon shot noise from the nominally constant DC level, which is typically dominated by the Local Oscillator (LO). Since the shot noise scales as the amplitude of the LO electric field level, and the heterodyne gain also scales the same way, the ratio of the shot noise to the mixed signal is constant no ...
[2] [11] The pinned photodiode is a photodetector structure with low lag, low noise, high quantum efficiency and low dark current. [2] The new photodetector structure invented at NEC was given the name "pinned photodiode" (PPD) by B.C. Burkey at Kodak in 1984.
The silicon avalanche photodiode is a high-gain photon detector. They are "ideal for use in high-speed, low-light-level applications". [3] The avalanche photodiode is operated with a reverse bias voltage of up to hundreds of volts, slightly below its breakdown voltage.