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ESP32 is a series of low-cost, low-power system-on-chip microcontrollers with integrated Wi-Fi and dual-mode Bluetooth.The ESP32 series employs either a Tensilica Xtensa LX6 microprocessor in both dual-core and single-core variations, an Xtensa LX7 dual-core microprocessor, or a single-core RISC-V microprocessor and includes built-in antenna switches, RF balun, power amplifier, low-noise ...
Schematic diagram of an opto-isolator showing source of light (LED) on the left, dielectric barrier in the center, and sensor (phototransistor) on the right [note 1]. An opto-isolator (also called an optocoupler, photocoupler, or optical isolator) is an electronic component that transfers electrical signals between two isolated circuits by using light. [1]
Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes .
Avalanche photodiodes are photodiodes with structure optimized for operating with high reverse bias, approaching the reverse breakdown voltage. This allows each photo-generated carrier to be multiplied by avalanche breakdown , resulting in internal gain within the photodiode, which increases the effective responsivity of the device.
In a photodiode array, pixels contain a p-n junction, integrated capacitor, and MOSFETs as selection transistors. A photodiode array was proposed by G. Weckler in 1968, predating the CCD. [ 1 ] This was the basis for the PPS, [ 2 ] which had image sensor elements with in-pixel selection transistors, proposed by Peter J.W. Noble in 1968, [ 13 ...
The structure of the silicon APD. An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization.
Conventional avalanche photodiodes (APDs) also produce an amplified analog current in response to light absorption. However, in an APD, the total gain is much lower and the excess noise factor much higher. Conversely, quantum efficiency can be higher and dark noise lower
The fill factor of an image sensor array is the ratio of a pixel's light sensitive area to its total area. For pixels without microlenses, the fill factor is the ratio of photodiode area to total pixel area, [1] but the use of microlenses increases the effective fill factor, often to nearly 100%, by converging light from the whole pixel area into the photodiode.