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Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the target's physical, chemical, or electrical properties. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research.
In the most common industrial example, rapid thermal processing is applied to silicon following the ion implantation of dopants such as phosphorus, arsenic and boron. [2] Vacancies generated at elevated temperature (1200 °C) facilitate the movement of these species from interstitial to substitutional lattice sites while amorphization damage ...
Ion beam mixing can be further enhanced by heat spike effects [4] Ion mixing (IM) is essentially similar in result to interdiffusion, hence most models of ion mixing involve an effective diffusion coefficient that is used to characterize thickness of the reacted layer as a function of ion beam implantation over a period of time. [3]
PIII-process with ECR-plasma source and magnetron. Plasma-immersion ion implantation (PIII) [1] or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to ...
Electron capture ionization (ECI) is the ionization of a gas phase atom or molecule by attachment of an electron to create an ion of the form A −•.The reaction is + where the M over the arrow denotes that to conserve energy and momentum a third body is required (the molecularity of the reaction is three).
As the input parameters, it needs the ion type and energy (in the range 10 eV – 2 GeV) and the material of one or several target layers. As the output, it lists or plots the three-dimensional distribution of the ions in the solid and its parameters, such as penetration depth, its spread along the ion beam (called straggle) and perpendicular to it, all target atom cascades in the target are ...
At low energy molecular ion beams are deposited intact (ion soft landing), while at a high deposition energy molecular ions fragment and atomic ions can penetrate further into the material, a process known as ion implantation. [4] Ion optics (such as radio frequency quadrupoles) can be mass selective. In IBD they are used to select a single, or ...
In medicine, proton therapy, or proton radiotherapy, is a type of particle therapy that uses a beam of protons to irradiate diseased tissue, most often to treat cancer.The chief advantage of proton therapy over other types of external beam radiotherapy is that the dose of protons is deposited over a narrow range of depth; hence in minimal entry, exit, or scattered radiation dose to healthy ...