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In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
This may be pictured as the superposition of two waveforms of arbitrary profile, one traveling up the x-axis and the other down the x-axis at the speed . The particular case of a sinusoidal wave traveling in one direction is obtained by choosing either f {\displaystyle f} or g {\displaystyle g} to be a sinusoid, and the other to be zero, giving
Load regulation is the capability to maintain a constant voltage (or current) level on the output channel of a power supply despite changes in the supply's load (such as a change in resistance value connected across the supply output).
A subsurface Zener diode, also called a buried Zener, is a device similar to the surface Zener, but the doping and design is such that the avalanche region is located deeper in the structure, typically several micrometers below the oxide. Hot carriers then lose energy by collisions with the semiconductor lattice before reaching the oxide layer ...
Reference voltage vs free-air temperature at test conditions. Design-center (middle plot) and worst-case deviation of ±2% (upper and lower plots) [12] The nominal reference voltage, V REF =2.495 V, stated in a datasheet, is tested in zener mode at an ambient temperature of +25 °C (77 °F), and I CA =10 mA. [13]
In a circuit with a three terminal device, such as a transistor, the current–voltage curve of the collector-emitter current depends on the base current. This is depicted on graphs by a series of (I C –V CE) curves at different base currents. A load line drawn on this graph shows how the base current will affect the operating point of the ...
If both inputs A and B are high (logic 1; near V+), then the diodes D1 and D2 are reverse biased. Resistors R1 and R3 will then supply enough current to turn on Q1 (drive Q1 into saturation) and also supply the current needed by R4. There will be a small positive voltage on the base of Q1 (V BE, about 0.3 V for germanium and 0.6 V for silicon).
Breakdown voltage is a characteristic of an insulator that defines the maximum voltage difference that can be applied across the material before the insulator conducts. In solid insulating materials, this usually [citation needed] creates a weakened path within the material by creating permanent molecular or physical changes by the sudden current.