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The prior art includes an RF MEMS frequency tunable fractal antenna for the 0.1–6 GHz frequency range, [18] and the actual integration of RF MEMS switches on a self-similar Sierpinski gasket antenna to increase its number of resonant frequencies, extending its range to 8 GHz, 14 GHz and 25 GHz, [19] [20] an RF MEMS radiation pattern ...
A digitally tuned capacitor is an IC variable capacitor based on several technologies. MEMS , BST and SOI / SOS devices are available from a number of suppliers and vary in capacitance range, quality factor and resolution for different RF tuning applications.
MEMS clock generators are MEMS timing devices with multiple outputs for systems that need more than a single reference frequency. MEMS oscillators are a valid alternative to older, more established quartz crystal oscillators, offering better resilience against vibration and mechanical shock, and reliability with respect to temperature variation.
A MEMS magnetic actuator is a device that uses the microelectromechanical systems (MEMS) to convert an electric current into a mechanical output by employing the well-known Lorentz Force Equation or the theory of Magnetism.
An early example of a MEMS device is the resonant-gate transistor, an adaptation of the MOSFET, developed by Robert A. Wickstrom for Harvey C. Nathanson in 1965. [4] Another early example is the resonistor, an electromechanical monolithic resonator patented by Raymond J. Wilfinger between 1966 and 1971.
In practice, capacitors deviate from the ideal capacitor equation in several aspects. Some of these, such as leakage current and parasitic effects are linear, or can be analyzed as nearly linear, and can be accounted for by adding virtual components to form an equivalent circuit. The usual methods of network analysis can then be applied. [34]
The depletion region with its ionized charges inside behaves like a capacitor. By varying the voltage applied to the junction it is possible to vary the depletion width . The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characteristics, such as its doping profile and ...
in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]