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The first low-cost junction transistor available to the general public was the CK722, a PNP germanium small signal unit introduced by Raytheon in early 1953 for $7.60 each. In the 1950s and 1960s, hundreds of hobbyist electronics projects based around the CK722 transistor were published in popular books and magazines.
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating at frequencies up to 60 MHz. [33] They were made by etching depressions into an n-type germanium base from both sides with jets of indium(III) sulfate until it was a few ten-thousandths of an inch thick.
Germanium is a chemical element; it has symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid (more rarely considered a metal) in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms ...
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. [1][2] They worked in a group led by physicist William Shockley. The group had been working together on experiments and theories of ...
Gordon Kidd Teal (January 10, 1907 – January 7, 2003) was an American engineer. He invented a method of applying the Czochralski method to produce extremely pure germanium single crystals used in making greatly improved transistors. [1] He, together with Morgan Sparks, invented a modification of the process that produced the configuration ...
2N107. 1950's PNP Transistors by General Electric. The 2N107 is an early germanium alloy junction PNP transistor developed by General Electric (GE) in 1955, to become GE's entry into the electronic hobbyist market successfully started with the CK722 transistor. Like the CK722, it enjoyed a long-standing popularity.
Semiconductor device. A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum ...
Silicon–germanium. SiGe (/ ˈsɪɡiː / or / ˈsaɪdʒiː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain -inducing ...