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Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, [1] although this is obviously a function of size).
A silicon p–n junction in reverse bias. Connecting the p-type region to the negative terminal of the voltage supply and the n-type region to the positive terminal corresponds to reverse bias. If a diode is reverse-biased, the voltage at the cathode is comparatively higher than at the anode. Therefore, very little current flows until the diode ...
Thus the device is converting some other form of energy into electric energy. Linear vs nonlinear: A straight line through the origin represents a linear circuit element, while a curved line represents a nonlinear element. For example, resistors, capacitors, and inductors are linear, while diodes and transistors are nonlinear.
Using the Shockley equation, the small-signal diode resistance of the diode can be derived about some operating point where the DC bias current is and the Q-point applied voltage is . [6] To begin, the diode small-signal conductance g D {\displaystyle g_{D}} is found, that is, the change in current in the diode caused by a small change in ...
This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction. Licensing I, the copyright holder of this work, hereby publish it under the following license:
A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.
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In the discussion below, focus is on the NPN BJT. In what is called active mode, the base–emitter voltage and collector–base voltage are positive, forward biasing the emitter–base junction and reverse-biasing the collector–base junction. In this mode, electrons are injected from the forward biased n-type emitter region into the p-type ...