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  2. Plasma etching - Wikipedia

    en.wikipedia.org/wiki/Plasma_etching

    Argon plasma etching has reported to enhance contact angle from 52 deg to 68 deg, [7] and, Oxygen plasma etching to reduce contact angle from 52 deg to 19 deg for CFRP composites for bone plate applications. Plasma etching has been reported to reduce the surface roughness from hundreds of nanometers to as much lower as 3 nm for metals. [8]

  3. Etching (microfabrication) - Wikipedia

    en.wikipedia.org/wiki/Etching_(microfabrication)

    The use of the term anisotropy for plasma etching should not be conflated with the use of the same term when referring to orientation-dependent etching. The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl 4) etches silicon and aluminium, and trifluoromethane etches ...

  4. Reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Reactive-ion_etching

    Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure by an electromagnetic field.

  5. Microfabrication - Wikipedia

    en.wikipedia.org/wiki/Microfabrication

    Etching is the removal of some portion of the thin film or substrate. The substrate is exposed to an etching (such as an acid or plasma) which chemically or physically attacks the film until it is removed. Etching techniques include: Dry etching (plasma etching) such as reactive-ion etching (RIE) or deep reactive-ion etching (DRIE)

  6. Isotropic etching - Wikipedia

    en.wikipedia.org/wiki/Isotropic_etching

    In semiconductor manufacturing, isotropic etching is a method commonly used to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma -phase, [ 1 ] although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide etching are more often used.

  7. Plasma cleaning - Wikipedia

    en.wikipedia.org/wiki/Plasma_cleaning

    Plasma cleaning is the removal of impurities and contaminants from surfaces through the use of an energetic plasma or dielectric barrier discharge (DBD) plasma created from gaseous species. Gases such as argon and oxygen , as well as mixtures such as air and hydrogen/nitrogen are used.

  8. Surface treatment of PTFE - Wikipedia

    en.wikipedia.org/wiki/Surface_treatment_of_PTFE

    A number of adhesion promotion methods have been developed to enhance PTFE bond strength. The primary methods currently used in industry are sodium etching and plasma etching. Results of ion beam treatment and laser surface roughening have also been reported in the literature, but do not have a significant presence as commercial processes.

  9. Chemical milling - Wikipedia

    en.wikipedia.org/wiki/Chemical_milling

    Chemical milling or industrial etching is the subtractive manufacturing process of using baths of temperature-regulated etching chemicals to remove material to create an object with the desired shape. [1] [2] Other names for chemical etching include photo etching, chemical etching, photo chemical etching and photochemical machining. It is ...