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This property makes the p–n junction extremely useful in modern semiconductor electronics. Bias is the application of a voltage relative to a p–n junction region: Forward bias is in the direction in which current readily flows; Reverse bias is in the direction of little or no current flow
A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.
Band-bending diagram for p–n diode in forward bias. Diffusion drives carriers across the junction. Quasi-Fermi levels and carrier densities in forward biased p–n-diode. The figure assumes recombination is confined to the regions where majority carrier concentration is near the bulk values, which is not accurate when recombination-generation ...
A p–n junction diode in low forward bias mode. The depletion width decreases as voltage increases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different quasi Fermi levels for conduction band and valence band in n and p regions (red curves).
By changing the bias current through a PIN diode, it is possible to quickly change its RF resistance. At high frequencies, the PIN diode appears as a resistor whose resistance is an inverse function of its forward current. Consequently, PIN diode can be used in some variable attenuator designs as amplitude modulators or output leveling circuits.
The diagram shows a schematic representation of an NPN transistor connected to two voltage sources. (The same description applies to a PNP transistor with reversed directions of current flow and applied voltage.) This applied voltage causes the lower p–n junction to become forward biased, allowing a flow of electrons from the emitter into the ...