When.com Web Search

Search results

  1. Results From The WOW.Com Content Network
  2. Crystallographic defect - Wikipedia

    en.wikipedia.org/wiki/Crystallographic_defect

    An example is the Stone Wales defect in nanotubes, which consists of two adjacent 5-membered and two 7-membered atom rings. Schematic illustration of defects in a compound solid, using GaAs as an example. Amorphous solids may contain defects. These are naturally somewhat hard to define, but sometimes their nature can be quite easily understood.

  3. Crystal twinning - Wikipedia

    en.wikipedia.org/wiki/Crystal_twinning

    Twin laws are symmetry operations that define the orientation between twin crystal segments. These are as characteristic of the mineral as are its crystal face angles. For example, crystals of staurolite show twinning at angles of almost precisely 90 degrees or 30 degrees. [3] A twin law is not a symmetry operation of the full set of basis ...

  4. Grain boundary - Wikipedia

    en.wikipedia.org/wiki/Grain_boundary

    For example, silica rich amorphous layer present in Si 3 N 3, is about 10 Å thick, but for special boundaries this equilibrium thickness is zero. [15] Complexion can be grouped in 6 categories, according to their thickness: monolayer, bilayer, trilayer, nanolayer (with equilibrium thickness between 1 and 2 nm) and wetting.

  5. Extended Wulff constructions - Wikipedia

    en.wikipedia.org/wiki/Extended_Wulff_constructions

    Extended Wulff constructions refers to a number of different ways to model the structure of nanoparticles as well as larger mineral crystals, and as such can be used to understand both the shape of certain gemstones or crystals with twins.as well as in other areas such as how nanoparticles play a role in the commercial production of chemicals using heterogeneous catalysts.

  6. Stacking fault - Wikipedia

    en.wikipedia.org/wiki/Stacking_fault

    In a TEM, bright field imaging is one technique used to identify the location of stacking faults. Typical image of stacking fault is dark with bright fringes near a low-angle grain boundary, sandwiched by dislocations at the end of the stacking fault. Fringes indicate that the stacking fault is at an incline with respect to the viewing plane. [3]

  7. Carrier scattering - Wikipedia

    en.wikipedia.org/wiki/Carrier_scattering

    Hydrogen bonds to Si fully satisfying sp 3 hybridization providing defect state occupancy preventing carrier scattering into these states. Surface defects can always be "passivated" with atoms to purposefully occupy the corresponding energy levels so that conduction electrons cannot scatter into these states (effectively decreasing n in Eq (10)).

  8. Eddy-current testing - Wikipedia

    en.wikipedia.org/wiki/Eddy-current_testing

    Variations in the electrical conductivity and magnetic permeability of the test object, and the presence of defects causes a change in eddy current and a corresponding change in phase and amplitude that can be detected by measuring the impedance changes in the coil, which is a telltale sign of the presence of defects. [5]

  9. Grain boundary sliding - Wikipedia

    en.wikipedia.org/wiki/Grain_boundary_sliding

    There are mainly two types of grain boundary sliding: Rachinger sliding, [2] and Lifshitz sliding. [3] Grain boundary sliding usually occurs as a combination of both types of sliding. Boundary shape often determines the rate and extent of grain boundary sliding. [4] Grain boundary sliding is a motion to prevent intergranular cracks from forming.