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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
The conduction of current of intrinsic semiconductor is enabled purely by electron excitation across the band-gap, which is usually small at room temperature except for narrow-bandgap semiconductors, like Hg 0.8 Cd 0.2 Te. The conductivity of a semiconductor can be modeled in terms of the band theory of solids.
An extrinsic semiconductor that has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move ...
In an intrinsic or lightly doped semiconductor, μ is close enough to a band edge that there are a dilute number of thermally excited carriers residing near that band edge. In semiconductors and semimetals the position of μ relative to the band structure can usually be controlled to a significant degree by doping or gating.
Silicon based intrinsic semiconductor becomes extrinsic when impurities such as Boron and Antimony are introduced. The conductivity of semiconductors may easily be modified by introducing impurities into their crystal lattice. The process of adding controlled impurities to a semiconductor is known as doping.
In electronics and semiconductor physics, the law of mass action relates the concentrations of free electrons and electron holes under thermal equilibrium.It states that, under thermal equilibrium, the product of the free electron concentration and the free hole concentration is equal to a constant square of intrinsic carrier concentration .
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
Here is the effective mass of the electrons in that particular semiconductor, and the quantity is the difference in energy between the conduction band and the Fermi level, which is half the band gap, : = ()