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Because of this charge there is an electric field in this region, as determined by Poisson's equation. The width of the depletion region adjusts so the negative acceptor charge on the p-side exactly balances the positive donor charge on the n-side, so there is no electric field outside the depletion region on either side.
A schematic of a MISFET is shown in Figure 1a. The source and the drain are connected by a semiconductor and the gate is separated from the channel by a layer of insulator. If there is no bias (potential difference) applied on the gate, the Band bending is induced due to the energy difference of metal conducting band and the semiconductor Fermi ...
The panels show energy band diagram, electric field, and net charge density. The built-in potential of the semiconductor varies, depending on the concentration of doping atoms. In this example, both p and n junctions are doped at a 1e15 cm −3 (160 μC/cm 3) doping level, leading to built-in potential of ~0.59 volts. Reducing depletion width ...
In the semiconductor at the smaller voltage shown in the top panel, the positive charge placed on the left face of the insulator lowers the energy of the valence band edge. Consequently, these states are fully occupied out to a so-called depletion depth where the bulk occupancy reestablishes itself because the field cannot penetrate further.
Electric charge flows through a semiconducting channel between source and drain terminals. By applying a reverse bias voltage to a gate terminal, the channel is pinched, so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals.
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
Electric charge is a conserved property: the net charge of an isolated system, the quantity of positive charge minus the amount of negative charge, cannot change. Electric charge is carried by subatomic particles. In ordinary matter, negative charge is carried by electrons, and positive charge is carried by the protons in the nuclei of atoms ...
[1] [2] [3] Figure 1. (a) Shows an energy diagram of n-type semiconductor in contact with redox electrolyte at the left side (yellow), and with a metallic ohmic contact at the right side. E c is the conduction band edge energy, E v is the valence band energy of the semiconductor.