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A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The term solid-state became popular at the beginning of the semiconductor era in the 1960s to distinguish this new technology. A semiconductor device works by controlling an electric current consisting of electrons or holes moving within a solid crystalline piece of semiconducting material such as silicon, while the thermionic vacuum tubes it replaced worked by controlling a current of ...
[6] A few of the properties of semiconductor materials were observed throughout the mid-19th and first decades of the 20th century. The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in
Pages in category "Semiconductor material types" The following 11 pages are in this category, out of 11 total. This list may not reflect recent changes. B.
A fourth element is often added to a I-III-VI 2 material to tune the bandgap for maximum solar cell efficiency. A representative example is copper indium gallium selenide (CuIn x Ga (1– x ) Se 2 , E g = 1.7–1.0 eV for x = 0–1 [ 1 ] ), which is used in copper indium gallium selenide solar cells .
First edition. Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, [1] first published in 1950. . It was a primary source, and was used as the first textbook, for scientists and engineers learning the new field of semiconductors as applied to the development of the transis
The first paper on SiGe was published in 1955 on the magnetoresistance of silicon germanium alloys . [2] The first mention of SiGe devices was actually in the original patent for the bipolar transistor where the idea of a SiGe base in a heterojunction bipolar transistor (HBT) was discussed with a description of the physics in the 1957. [3]