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Critically, this magnetoresistive scenario depends sensitively on the device geometry and current lines and it does not rely on magnetic materials. In a semiconductor with a single carrier type, the magnetoresistance is proportional to (1 + ( μB ) 2 ) , where μ is the semiconductor mobility (units m 2 ·V −1 ·s −1 , equivalently m 2 ·Wb ...
Types of crank sensor include: the inductive sensor, Hall Effect sensor, magnetoresistive sensor, and optical sensor. Inductive sensors have the simplest construction and are usually purely passive devices. Hall effect and magnetoresistive sensors have the advantage over inductive sensors in that they can detect static (non-changing) magnetic ...
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other.
A cell of magnetoresistive random-access memory (MRAM) has a structure similar to the spin-valve sensor. The value of the stored bits can be encoded via the magnetization direction in the sensor layer; it is read by measuring the resistance of the structure.
They are activated by an external magnetic field. In this generalized device, the Hall sensor senses the magnetic field produced by the magnetic system. This system responds to the quantity to be sensed (current, temperature, position, velocity, etc.) through the input interface. The Hall element is the basic magnetic field sensor.
The White House said the president wants to end a carried interest tax break prized by Wall Street hedge funds and private equity firms.