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DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same ...
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
16 GiB DDR4-2666 1.2 V Unbuffered DIMM (UDIMM). DDR, DDR2, DDR3, DDR4 and DDR5 all have different pin counts and/or different notch positions, and none of them are forward compatible or backward compatible. DDR5 SDRAM is the most recent type of DDR memory and has been in use since 2020.
DDR3 and DDR4 use A12 during read and write command to indicate "burst chop", half-length data transfer; DDR4 changes the encoding of the activate command. A new signal ACT controls it, during which the other control lines are used as row address bits 16, 15 and 14. When ACT is high, other commands are the same as above.
Two types of DIMMs (dual in-line memory modules): a 168-pin SDRAM module (top) and a 184-pin DDR SDRAM module (bottom). Memory modules of SK Hynix. In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted.
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously.In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).