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In electronics, emitter-coupled logic (ECL) is a high-speed integrated circuit bipolar transistor logic family. ECL uses an overdriven bipolar junction transistor (BJT) differential amplifier with single-ended input and limited emitter current to avoid the saturated (fully on) region of operation and the resulting slow turn-off behavior. [ 2 ]
Several variants of the original TO-5 package have the same cap dimensions but differ in the number and length of the leads (wires). Somewhat incorrectly, TO-5 and TO-39 are often used in manufacturer's literature as synonyms for any package with the cap dimensions of TO-5, regardless of the number of leads, or even for any package with the diameter of TO-5, regardless of the cap height and ...
The TO-66 package is made entirely of metal and is commonly used by silicon controlled rectifiers and power transistors. [2] In Europe, it was popularly used by the complementary germanium power transistors AD161/AD162. [3] The TO-66 package consists of a diamond-shaped base plate with diagonals of 31.4 mm (1.24 in) and 19.0 mm (0.75 in).
Examples are the classic transistor emitter-coupled Schmitt trigger, the op-amp inverting Schmitt trigger, etc. Modified input voltage (parallel feedback): when the input voltage crosses the threshold in either direction the circuit changes its input voltage in the same direction (now it adds a part of its output voltage directly to the input ...
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
The VMOS structure has a V-groove at the gate region. A VMOS (/ ˈ v iː m ɒ s /) (vertical metal oxide semiconductor or V-groove MOS) transistor is a type of metal–oxide–semiconductor field-effect transistor ().
In 1956, Richard Baker described some discrete diode clamp circuits to keep transistors from saturating. [2] The circuits are now known as Baker clamps.One of those clamp circuits used a single germanium diode to clamp a silicon transistor in a circuit configuration that is the same as the Schottky transistor.
The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]