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  2. Molecular-beam epitaxy - Wikipedia

    en.wikipedia.org/wiki/Molecular-beam_epitaxy

    Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).

  3. Molecular beam - Wikipedia

    en.wikipedia.org/wiki/Molecular_beam

    Molecular beams are useful for fabricating thin films in molecular beam epitaxy and artificial structures such as quantum wells, quantum wires, and quantum dots. Molecular beams have also been applied as crossed molecular beams. The molecules in the molecular beam can be manipulated by electrical fields and magnetic fields. [1]

  4. Knudsen cell - Wikipedia

    en.wikipedia.org/wiki/Knudsen_Cell

    The Knudsen cell is used to measure the vapor pressures of a solid with very low vapor pressure. Such a solid forms a vapor at low pressure by sublimation.The vapor slowly effuses through the pinhole, and the loss of mass is proportional to the vapor pressure and can be used to determine this pressure. [1]

  5. Epitaxy - Wikipedia

    en.wikipedia.org/wiki/Epitaxy

    In this method, a source material is heated to produce an evaporated beam of particles, which travel through a very high vacuum (10 −8 Pa; practically free space) to the substrate and start epitaxial growth. [14] [15] Chemical beam epitaxy, on the other hand, is an ultra-high vacuum process that uses gas phase precursors to generate the ...

  6. Band-gap engineering - Wikipedia

    en.wikipedia.org/wiki/Band-gap_engineering

    Molecular-beam epitaxy is a technique used to construct thin epitaxial films of materials ranging from oxides to semiconductors to metals. Different beams of atoms and molecules in an ultra-high vacuum environment are shot onto a nearly atomically clean crystal, creating a layering effect.

  7. Chemical beam epitaxy - Wikipedia

    en.wikipedia.org/wiki/Chemical_beam_epitaxy

    Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term ...

  8. John R. Arthur Jr. - Wikipedia

    en.wikipedia.org/wiki/John_R._Arthur_Jr.

    John R. Arthur Jr. is an American materials scientist best known as a pioneer of molecular beam epitaxy. Together with Alfred Y. Cho, Arthur pioneered molecular beam epitaxy at Bell Laboratories, where he published a paper in July 1968 that described construction of epitaxial gallium arsenide layers using molecular beam epitaxy.

  9. Crystalline coatings - Wikipedia

    en.wikipedia.org/wiki/Crystalline_Coatings

    Crystalline coatings (or crystalline mirrors [1]) are a type of thin-film optical interference coating that is made by merging monocrystalline multilayers deposited via processes such as molecular-beam epitaxy (MBE) and metalorganic vapour-phase epitaxy (MOVPE) with microfabrication techniques including direct bonding and selective etching.