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  2. Wafer (electronics) - Wikipedia

    en.wikipedia.org/wiki/Wafer_(electronics)

    Wafers grown using materials other than silicon will have different thicknesses than a silicon wafer of the same diameter. Wafer thickness is determined by the mechanical strength of the material used; the wafer must be thick enough to support its own weight without cracking during handling. The tabulated thicknesses relate to when that process ...

  3. Etch pit density - Wikipedia

    en.wikipedia.org/wiki/Etch_pit_density

    The density of the pits can be determined by optical contrast microscopy. Silicon wafers have usually a very low density of < 100 cm −2 while semi-insulating GaAs wafers have a density on the order of 10 5 cm −2.

  4. Monocrystalline silicon - Wikipedia

    en.wikipedia.org/wiki/Monocrystalline_silicon

    The primary application of monocrystalline silicon is in the production of discrete components and integrated circuits.Ingots made by the Czochralski method are sliced into wafers about 0.75 mm thick and polished to obtain a regular, flat substrate, onto which microelectronic devices are built through various microfabrication processes, such as doping or ion implantation, etching, deposition ...

  5. Silicon carbide - Wikipedia

    en.wikipedia.org/wiki/Silicon_carbide

    Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .

  6. Silicon - Wikipedia

    en.wikipedia.org/wiki/Silicon

    Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive.

  7. Porous silicon - Wikipedia

    en.wikipedia.org/wiki/Porous_silicon

    During formation of porous silicon layer by means of anodization of a Si wafer, these parameter can be controlled by the Si resistivity, HF concentration, current density and etching time. It is possible to create several porous layers with different pore densities and diameters of the pores on the same substrate by etching with different ...

  8. Semiconductor device fabrication - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device...

    The number of killer defects on a wafer, regardless of die size, can be noted as the defect density (or D 0) of the wafer per unit area, usually cm 2. The fab tests the chips on the wafer with an electronic tester that presses tiny probes against the chip. The machine marks each bad chip with a drop of dye.

  9. Chemistry of photolithography - Wikipedia

    en.wikipedia.org/wiki/Chemistry_of_photolithography

    Silicon wafers are cut from a solid ingot of nearly-pure (99.9999999%) silicon. This is done through the process of Czochralski growth, which is diagramed in the adjacent image, and produces a single intact diamond cubic silicon crystal.