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Galinstan is a brand name for an alloy composed of gallium, indium, and tin which melts at −19 °C (−2 °F) and is thus liquid at room temperature. [4] [5] In scientific literature, galinstan is also used to denote the eutectic alloy of gallium, indium, and tin, which melts at around +11 °C (52 °F). [5]
Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga 2 O 3. It is actively studied for applications in power electronics, phosphors, and gas sensing. [5] [6] [7] The compound has several polymorphs, of which the monoclinic β-phase is the most stable.
Multijunction photovoltaic cells, developed for satellite power applications, are made by molecular-beam epitaxy or metalorganic vapour-phase epitaxy of thin films of gallium arsenide, indium gallium phosphide, or indium gallium arsenide. The Mars Exploration Rovers and several satellites use triple-junction gallium arsenide on germanium cells ...
Indium is an ingredient in the gallium–indium–tin alloy galinstan, which is liquid at room temperature and replaces mercury in some thermometers. [80] Other alloys of indium with bismuth, cadmium, lead, and tin, which have higher but still low melting points (between 50 and 100 °C), are used in fire sprinkler systems and heat regulators. [67]
Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards [2] the preferred nomenclature for the alloy is Ga x In 1-x As where the group-III elements appear in order of increasing atomic number, as in the related alloy system Al x Ga 1-x As.
Gallium trichloride is a common starting reagent for the formation of organogallium compounds, such as in carbogallation reactions. [15] Gallium trichloride reacts with lithium cyclopentadienide in diethyl ether to form the trigonal planar gallium cyclopentadienyl complex GaCp 3. Gallium(I) forms complexes with arene ligands such as ...
IGZO's advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxide semiconductors. [11] The transistors are slightly photo-sensitive , but the effect becomes significant only in the deep violet to ultra-violet ( photon energy above 3 eV ) range, offering the ...
An Ellingham diagram is a graph showing the temperature dependence of the stability of compounds. This analysis is usually used to evaluate the ease of reduction of metal oxides and sulfides . These diagrams were first constructed by Harold Ellingham in 1944. [ 1 ]