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As the electron mobility in the n-type channel of NMOS MOSFETs is about three times that of the hole mobility in the p-type channel of PMOS MOSFETS, NMOS logic allows for an increased switching speed. For this reason NMOS logic quickly began to replace PMOS logic. By the late 1970s, NMOS microprocessors had overtaken PMOS processors. [16]
PMOS: Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [2] [3] NMOS: 10,000 nm: 100 nm: PMOS Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [4] NMOS May 1965: 8,000 nm 150 nm: NMOS Chih-Tang Sah, Otto Leistiko, A.S. Grove Fairchild Semiconductor [5] 5,000 nm: 170 nm: PMOS December 1972: 1,000 nm? PMOS Robert H. Dennard ...
Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.
For many years, NMOS circuits were much faster than comparable PMOS and CMOS circuits, which had to use much slower p-channel transistors. It was also easier to manufacture NMOS than CMOS, as the latter has to implement p-channel transistors in special n-wells on the p-substrate, not prone to damage from bus conflicts, and not as vulnerable to ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
These were the driving principles in the design of NMOS logic which uses n-channel MOSFETs exclusively. However, neglecting leakage current, unlike CMOS logic, NMOS logic consumes power even when no switching is taking place. The MOSFET invented at Bell Labs between 1955 and 1960, had both pMOS and nMOS devices with a 20 μm process.
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A transmission gate (TG) is an analog gate similar to a relay that can conduct in both directions or block by a control signal with almost any voltage potential. [1] It is a CMOS-based switch, in which PMOS passes a strong 1 but poor 0, and NMOS passes strong 0 but poor 1.