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HCMOS ("high-speed CMOS") is the set of specifications for electrical ratings and characteristics, forming the 74HC00 family, a part of the 7400 series of integrated circuits. [ 1 ] The 74HC00 family followed, and improved upon, the 74C00 series (which provided an alternative CMOS logic family to the 4000 series but retained the part number ...
The following is a list of 7400-series digital logic integrated circuits.In the mid-1960s, the original 7400-series integrated circuits were introduced by Texas Instruments with the prefix "SN" to create the name SN74xx.
High-speed CMOS (HCMOS) chip [41] [42] SAM9707 1998 4 Quasimidi digital synthesizers (Rave-O-Lution 309, Sirius, Polymorph) Digital signal processor (DSP) core [43] [44] Ensoniq: Ensoniq 5503 1984 32 Mirage synthesizer and Apple IIGS computer [45] Hudson Soft / NEC / Epson: Hudson Soft HuC6280: 1987 6 NEC's PC Engine (TurboGrafx-16) console ...
Today, surface-mounted CMOS versions of the 7400 series are used in various applications in electronics and for glue logic in computers and industrial electronics. The original through-hole devices in dual in-line packages (DIP/DIL) were the mainstay of the industry for many decades.
The following is a list of CMOS 4000-series digital logic integrated circuits.In 1968, the original 4000-series was introduced by RCA.Although more recent parts are considerably faster, the 4000 devices operate over a wide power supply range (3V to 18V recommended range for "B" series) and are well suited to unregulated battery powered applications and interfacing with sensitive analogue ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
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In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.