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CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
A primary advantage of a CMOS sensor is that it is typically less expensive to produce than a CCD sensor, as the image capturing and image sensing elements can be combined onto the same IC, with simpler construction required. [29] A CMOS sensor also typically has better control of blooming (that is, of bleeding of photo-charge from an over ...
Metals (made from intrinsic CMOS interconnects, shown in black) create a top and a bottom grating. The top grating creates a Talbot pattern at the depth of the bottom grating, which lines up with either opaque metal or transparent gap in the lower, analyzer grating, depending on incident angle.
A micrograph of the corner of the photosensor array of a webcam digital camera Image sensor (upper left) on the motherboard of a Nikon Coolpix L2 6 MP. The two main types of digital image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor), fabricated in complementary MOS (CMOS) or N-type MOS (NMOS or Live MOS) technologies.
Schematic of two stages of CMOS inverter, showing input and output voltage-time plots. I on and I off (along with I DG, I SD and I DB components) indicate technologically controlled factors. Credit: Prof. Robert Dutton in CRC Electronic Design Automation for IC Handbook, Vol II, Chapter 25, by permission.
2009 Nobel Prize in Physics laureates George E. Smith and Willard Boyle, 2009, photographed on a Nikon D80, which uses a CCD sensor. The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, [2] with MOS capacitors being the basic building blocks of a CCD, [1] [3] and a depleted MOS structure used as the photodetector in early CCD devices.
This page was last edited on 5 October 2019, at 04:46 (UTC).; Text is available under the Creative Commons Attribution-ShareAlike 4.0 License; additional terms may ...
Exmor R is a back-illuminated version of Sony's CMOS image sensor. [5] Exmor R was announced by Sony on 11 June 2008 and was the world's first mass-produced implementation of the back-illuminated sensor technology. [6] [non-primary source needed] Sony claims that Exmor R is approximately twice as sensitive as a normal front illuminated sensor.