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NEM relays can be fabricated using a back end of line compatible process, allowing them to be built on top of CMOS. [1] This property allows NEM relays to be used to significantly reduce the area of certain circuits. For example, a CMOS-NEM relay hybrid inverter occupies 0.03 μm 2, one-third the area of a 45 nm CMOS inverter. [5]
A "double pole double throw" (DPDT) relay can generally achieve the same electrical functionality as an H-bridge (considering the usual function of the device). However a semiconductor-based H-bridge would be preferable to the relay where a smaller physical size, high speed switching, or low driving voltage (or low driving power) is needed, or ...
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