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An account of the early history of scanning electron microscopy has been presented by McMullan. [2] [3] Although Max Knoll produced a photo with a 50 mm object-field-width showing channeling contrast by the use of an electron beam scanner, [4] it was Manfred von Ardenne who in 1937 invented [5] a microscope with high resolution by scanning a very small raster with a demagnified and finely ...
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A scanning transmission electron microscope (STEM) is a type of transmission electron microscope (TEM). Pronunciation is [stɛm] or [ɛsti:i:ɛm]. As with a conventional transmission electron microscope (CTEM), images are formed by electrons passing through a sufficiently thin specimen. However, unlike CTEM, in STEM the electron beam is focused ...
Annular dark-field imaging is a method of mapping samples in a scanning transmission electron microscope (STEM). These images are formed by collecting scattered electrons with an annular dark-field detector. [1] Conventional TEM dark-field imaging uses an objective aperture to only collect scattered electrons that pass through.
An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope to control the electron beam, for instance focusing them to produce magnified images or electron diffraction patterns.
4D scanning transmission electron microscopy (4D STEM) is a subset of scanning transmission electron microscopy (STEM) which utilizes a pixelated electron detector to capture a convergent beam electron diffraction (CBED) pattern at each scan location. This technique captures a 2 dimensional reciprocal space image associated with each scan point ...
By Keith Morrison Taking the phrase of "putting it under the microscope" quite literally, the Nikon Small World contest recently announced its winners for 2014. Now in its 40th year, the contest ...
Electron channelling contrast imaging (ECCI) is a scanning electron microscope (SEM) diffraction technique used in the study of defects in materials. These can be dislocations or stacking faults that are close to the surface of the sample, low angle grain boundaries or atomic steps.