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  2. Fin field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Fin_field-effect_transistor

    A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.

  3. List of semiconductor scale examples - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    FinFET: Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda Hitachi Central Research Laboratory [57] [58] [59] December 1998: 17 nm: FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley) [60] [61] 2001 15 nm: FinFET Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu: University of ...

  4. 14 nm process - Wikipedia

    en.wikipedia.org/wiki/14_nm_process

    In May 2016, Nvidia released its GeForce 10 series GPUs based on the Pascal architecture, which incorporates TSMC's "16 nm" FinFET technology and Samsung's "14 nm" FinFET technology. [36] [37] [needs update] In June 2016, AMD released its Radeon RX 400 GPUs based on the Polaris architecture, which incorporated "14 nm" FinFET technology from ...

  5. Multigate device - Wikipedia

    en.wikipedia.org/wiki/Multigate_device

    Different FinFET structures, which can be modeled by BSIM-CMG. BSIMCMG106.0.0, [65] officially released on March 1, 2012 by UC Berkeley BSIM Group, is the first standard model for FinFETs. BSIM-CMG is implemented in Verilog-A. Physical surface-potential-based formulations are derived for both intrinsic and extrinsic models with finite body doping.

  6. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown. The channel of a FET is doped to produce either an n-type semiconductor or a p-type semiconductor. The drain and source may be doped of opposite type to the channel, in the case of enhancement mode FETs, or doped of similar type to the ...

  7. Subthreshold conduction - Wikipedia

    en.wikipedia.org/wiki/Subthreshold_conduction

    Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

  8. Kill A Watt - Wikipedia

    en.wikipedia.org/wiki/Kill_A_Watt

    This Kill A Watt model P4400 is displaying a current draw of 10.27 Amperes in this mode. Prodigit Model 2000MU (UK version), shown in use and displaying a reading of 10 Watts being consumed by the appliance. The Kill A Watt (a pun on kilowatt) is an electricity usage monitor manufactured by Prodigit Electronics and sold by P3 International.

  9. Current meter - Wikipedia

    en.wikipedia.org/wiki/Current_meter

    The housing contains a data logger that records the orientation (angle from vertical and compass bearing) of the Tilt Current Meter. Floating tilt current meters are typically deployed on the bottom with a lead or concrete anchor but may be deployed on lobster traps or other convenient anchors of opportunity. [5] Sinking tilt current meters may ...