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The Blech length must be considered when designing test structures to evaluate electromigration. This minimum length is typically some tens of microns for chip traces, and interconnections shorter than this are sometimes referred to as 'electromigration immortal'.
Black's Equation is a mathematical model for the mean time to failure (MTTF) of a semiconductor circuit due to electromigration: a phenomenon of molecular rearrangement (movement) in the solid phase caused by an electromagnetic field. The equation is: [1] = ()
Lorentz force on a charged particle (of charge q) in motion (velocity v), used as the definition of the E field and B field. Here subscripts e and m are used to differ between electric and magnetic charges. The definitions for monopoles are of theoretical interest, although real magnetic dipoles can be described using pole strengths.
This means by definition that the connection ∇ is flat there. In mentioned Aharonov–Bohm effect, however, the connection depends on the magnetic field through the tube since the holonomy along a non-contractible curve encircling the tube is the magnetic flux through the tube in the proper units. This can be detected quantum-mechanically ...
The Nernst–Planck equation is a conservation of mass equation used to describe the motion of a charged chemical species in a fluid medium. It extends Fick's law of diffusion for the case where the diffusing particles are also moved with respect to the fluid by electrostatic forces.
The electron mobility is defined by the equation: =. where: E is the magnitude of the electric field applied to a material,; v d is the magnitude of the electron drift velocity (in other words, the electron drift speed) caused by the electric field, and
Electrochemical migration (ECM) is the dissolution and movement of metal ions in presence of electric potential, which results in the growth of dendritic structures between anode and cathode.
The Transfer Length Method or the "Transmission Line Model" (both abbreviated as TLM) is a technique used in semiconductor physics and engineering to determine the specific contact resistivity between a metal and a semiconductor.