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A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink Random-access memory ( RAM ; / r æ m / ) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code .
The naming convention for DDR, DDR2 and DDR3 modules specifies either a maximum speed (e.g., DDR2-800) or a maximum bandwidth (e.g., PC2-6400). The speed rating (800) is not the maximum clock speed, but twice that (because of the doubled data rate). The specified bandwidth (6400) is the maximum megabytes transferred per second using a 64-bit width.
Memory timings or RAM timings describe the timing information of a memory module or the onboard LPDDRx. Due to the inherent qualities of VLSI and microelectronics, memory chips require time to fully execute commands. Executing commands too quickly will result in data corruption and results in system instability.
A memory divider is a ratio which is used to determine the operating clock frequency of computer memory in accordance with front side bus (FSB) frequency, if the memory system is dependent on FSB clock speed. Along with memory latency timings, memory dividers are extensively used in overclocking memory subsystems to find stable, working memory ...
To access memory, a row must first be selected and loaded into the sense amplifiers. This row is then active, and columns may be accessed for read or write. The CAS latency is the delay between the time at which the column address and the column address strobe signal are presented to the memory module and the time at which the corresponding ...
Rambus announced a working DDR5 dual in-line memory module (DIMM) in September 2017. [9] [10] On November 15, 2018, SK Hynix announced completion of its first DDR5 RAM chip; running at 5.2 GT/s at 1.1 V. [11] In February 2019, SK Hynix announced a 6.4 GT/s chip, the highest speed specified by the preliminary DDR5 standard. [12]
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
Memory latency is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor. If the data are not in the processor's cache, it takes longer to obtain them, as the processor will have to communicate with the external memory cells. Latency is therefore a fundamental measure of the speed ...