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[12] [13] The invention of the MOSFET enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores. [14] The first modern memory cells were introduced in 1964, when John Schmidt designed the first 64-bit p-channel MOS static random-access memory (SRAM).
Mosys uses a single-transistor storage cell (bit cell) like dynamic random-access memory (DRAM), but surrounds the bit cell with control circuitry that makes the memory functionally equivalent to SRAM (the controller hides all DRAM-specific operations such as precharging and refresh). 1T-SRAM (and PSRAM in general) has a standard single-cycle ...
TRADIC. This is a list of transistorized computers, which were digital computers that used discrete transistors as their primary logic elements. Discrete transistors were a feature of logic design for computers from about 1960, when reliable transistors became economically available, until monolithic integrated circuits displaced them in the 1970s.
The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), [12] invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, [13] enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory. [12]
SanDisk X4 flash memory cards, introduced in 2009, was one of the first products based on NAND memory that stores 4 bits per cell, commonly referred to as quad-level-cell (QLC), using 16 discrete charge levels (states) in each individual transistor. The QLC chips used in these memory cards were manufactured by Toshiba, SanDisk and SK Hynix. [30 ...
Some solid-state storage devices use RAM and a battery that preserves the contents of the RAM without system power as long as the battery continues to provide power. Flash-based storage does not suffer the limitation of a battery, but RAM-backed storage is faster and does not experience write amplification. [3] [8] [9]
The 1T-1C storage cell design in a FeRAM is similar in construction to the storage cell in DRAM, in that both cell types include one capacitor and one access transistor. In a DRAM cell capacitor, a linear dielectric is used, whereas in a FeRAM cell capacitor the dielectric structure includes ferroelectric material , typically lead zirconate ...
LSI Logic Corporation, was an American company founded in Santa Clara, California, was a pioneer in the ASIC and EDA industries. It evolved over time to design and sell semiconductors and software that accelerated storage and networking in data centers, mobile networks and client computing.