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Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations
The Mead–Conway VLSI chip design revolution, or Mead and Conway revolution, was a very-large-scale integration design revolution starting in 1978 which resulted in a worldwide restructuring of academic materials in computer science and electrical engineering education, and was paramount for the development of industries based on the application of microelectronics.
To reflect further growth of the complexity, the term ULSI that stands for "ultra-large-scale integration" was proposed for chips of more than 1 million transistors. [119] Wafer-scale integration (WSI) is a means of building very large integrated circuits that uses an entire silicon wafer to produce a single "super-chip". Through a combination ...
It is effectively two transistors on the same chip. One is much larger than the other, but both are large in comparison to transistors in large-scale integration because this particular example is intended for power applications.
The transistor count is the number of transistors in an electronic device (typically on a single substrate or silicon die).It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in cache memories, which consist mostly of the same memory cell circuits replicated many times).