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In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
Comparison of enhancement-mode and depletion-mode MOSFET ... work function difference between the gate material and channel material. Because polysilicon is a ...
In n-channel enhancement-mode devices, a conductive channel does not exist naturally within the transistor. With no V GS, dopant ions added to the body of the FET form a region with no mobile carriers called a depletion region. A positive V GS attracts free-floating electrons within the body towards the gate. But enough electrons must be ...
A depletion-mode device with gate tied to the opposite supply rail is a much better load than an enhancement-mode device, acting somewhere between a resistor and a current source. The first depletion-load NMOS circuits were pioneered and made by the DRAM manufacturer Mostek , which made depletion-mode transistors available for the design of the ...
The MOSFET is also capable of handling higher power than the JFET. [35] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [36] and communications technology (such as smartphones). [37]
The MOSFETs are n-type enhancement mode transistors, arranged in a so-called "pull-down network" (PDN) between the logic gate output and negative supply voltage (typically the ground). A pull up (i.e. a "load" that can be thought of as a resistor, see below) is placed between the positive supply voltage and each logic gate output.
A native MOSFET is a transistor with nearly zero threshold voltage. Native n-channel transistors have a niche applications in low-voltage operational amplifiers and in low-voltage digital memory, where it functions as the weak pull-down. It is also used in low-voltage interface circuits.
PMOS uses p-channel (+) metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals.