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A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm. [6]
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles ) pass through the barrier by the process of quantum tunnelling .
The tunnel diode circuit (see diagram) is an example. [82] The tunnel diode TD has voltage controlled negative differential resistance. [54] The battery adds a constant voltage (bias) across the diode so it operates in its negative resistance range, and provides power to amplify the signal.
During the 1960s the use of tunnel diodes in logic circuits was an active research topic. When compared to transistor logic gates of the time, the tunnel diode offered much higher speeds. Unlike other diode types, the tunnel diode offered the possibility of amplification of signals at each stage.
In addition to ferroelectric tunnel junctions, other more established and emerging devices based on the same principles exist. These include: Magnetic tunnel junction: the electrons tunnel from one magnetic material to another via a thin insulating barrier. Multijunction photovoltaic cell; Tunnel diode; Superconducting tunnel junction
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...