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IGZO is widely used in thin-film transistors (TFT) for display applications, such as in the TFT backplane of flat-panel displays (FPDs). IGZO-TFT was developed by Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 (crystalline IGZO-TFT) [4] [5] and in 2004 (amorphous IGZO-TFT). [6]
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) ... TFT-LCDs with IGZO transistors first showed up in 2012, and were first ...
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor ( MOSFET ) where the word "oxide" refers to the insulating gate dielectric (normally silicon dioxide ).
In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET. Paul K. Weimer, also of RCA, implemented Wallmark's ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide.
The concept of a thin-film transistor (TFT) was first proposed by John Wallmark who in 1957 filed a patent for a thin film MOSFET in which germanium monoxide was used as a gate dielectric. Thin-film transistor was developed in 1962 by Paul K. Weimer who implemented Wallmark's ideas. [16] The TFT is a special type of MOSFET. [17]
MBCFET, a variant of GAAFET that uses horizontal nanosheets instead of nanowires, made by Samsung. Also known as RibbonFET (made by Intel) and as horizontal nanosheet transistor. Thin-film transistor (TFT), used in LCD and OLED displays, types include amorphous silicon, LTPS, LTPO and IGZO transistors; Floating-gate MOSFET (FGMOS), for non ...
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