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Stress migration is a failure mechanism that often occurs in integrated circuit metallization (aluminum, copper). Voids form as result of vacancy migration driven by the hydrostatic stress gradient. Large voids may lead to open circuit or unacceptable resistance increase that impedes the IC performance.
The model is abstract, not based on a specific physical model, but flexibly describes the failure rate dependence on the temperature, the electrical stress, and the specific technology and materials. More adequately described as descriptive than prescriptive, the values for A , n , and Q are found by fitting the model to experimental data.
Electromigration (red arrow) is due to the momentum transfer from the electrons moving in a wire. Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms.
eFuses can be made out of silicon or metal traces. In both cases, they work (blow) by electromigration, the phenomenon where electric flow causes the conductor material to move. Although electromigration is generally undesired in chip design as it causes failures, eFuses are made of weak traces that are designed to fail before others do. [3] [4]
Electrochemical migration (ECM) is the dissolution and movement of metal ions in presence of electric potential, which results in the growth of dendritic structures between anode and cathode. The process is most commonly observed in printed circuit boards where it may significantly decrease the insulation between conductors.
Feedback-controlled electromigration (FCE) is an experimental technique to investigate the phenomenon known as electromigration. By controlling the voltage applied as the conductance varies it is possible to keep the voltage at a critical level for electromigration .
Grain boundary sliding (GBS) is a material deformation mechanism where grains slide against each other. This occurs in polycrystalline material under external stress at high homologous temperature (above ~0.4 [1]) and low strain rate and is intertwined with creep.
This type of stress may be called (simple) normal stress or uniaxial stress; specifically, (uniaxial, simple, etc.) tensile stress. [13] If the load is compression on the bar, rather than stretching it, the analysis is the same except that the force F and the stress σ {\displaystyle \sigma } change sign, and the stress is called compressive ...