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The first DDR4 memory module prototype was manufactured by Samsung and announced in January 2011. [a] Physical comparison of DDR, DDR2, DDR3, and DDR4 SDRAM Front and back of 8 GB [1] DDR4 memory modules. 2005: Standards body JEDEC began working on a successor to DDR3 around 2005, [14] about 2 years before the launch of DDR3 in 2007.
Quad-channel memory debuted on Intel's Nehalem-EX LGA 1567 platform of Xeon CPUs, aka Beckton in 2010, and was introduced to the high end product line on the Intel X79 LGA 2011 platform with Sandy Bridge-E in late 2011. DDR4 replaced DDR3 on the Intel X99 LGA 2011 platform, aka Haswell-E, and is also used in AMD's Threadripper platform. [16]
It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.
Low-Power Double Data Rate (LPDDR), also known as LPDDR SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) that consumes less power than other random access memory designs and is thus targeted for mobile computing devices such as laptop computers and smartphones. Older variants are also known as Mobile DDR, and abbreviated as ...
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips.
Standard DDR5 memory speeds range from 4,000 to 6,400 million transfers per second (PC5-32000 to PC5-51200). [3] Higher speeds may be added later, as happened with previous generations. Compared to DDR4 SDRAM, the minimum burst length was doubled to 16, with the option of "burst chop" after eight transfers.