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Another useful characteristic is the common-base current gain, α F. The common-base current gain is approximately the gain of current from emitter to collector in the forward-active region. This ratio usually has a value close to unity; between 0.980 and 0.998. It is less than unity due to recombination of charge carriers as they cross the ...
Some models base the collector current correction factor on the collector–base voltage V CB (as described in base-width modulation) instead of the collector–emitter voltage V CE. [3] Using V CB may be more physically plausible, in agreement with the physical origin of the effect, which is a widening of the collector–base depletion layer ...
In electronics, a common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier. It offers high current gain (typically 200), medium input resistance and a high output resistance.
In other words, the circuit has current gain (which depends largely on the h FE of the transistor) instead of voltage gain. A small change to the input current results in much larger change in the output current supplied to the output load. One aspect of buffer action is transformation of impedances.
The current gain is very nearly unity as long as R S ≫ r E. An alternative analysis technique is based upon two-port networks . For example, in an application like this one where current is the output, an h-equivalent two-port is selected because it uses a current amplifier in the output port.
h fx = h fe – The current-gain of the transistor. This parameter is often specified as h FE or the DC current-gain (β DC) in datasheets. h ox = h oe – The output impedance of transistor. This term is usually specified as an admittance and has to be inverted to convert it to an impedance. Date: 4 August 2010, 06:50 (UTC) Source: H ...
The current gain is unity, so the same current is delivered to the output load R L, producing by Ohm's law an output voltage v out = v Thév R L / R S, that is, the first form of the voltage gain above. In the second case R S << 1/g m and the Thévenin representation of the source is useful, producing the second form for the gain, typical of ...
A Darlington pair behaves like a single transistor, meaning it has one base, collector, and emitter. It typically creates a high current gain (approximately the product of the gains of the two transistors, because their β values multiply together). A general relation between the compound current gain and the individual gains is given by: