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The area of an individual device reduces by 51%, because area is length times width. The capacitance associated with the device, C, is reduced by 30% (0.7×), because capacitance varies with area over distance. To keep the electric field unchanged, the voltage, V, is reduced by 30% (0.7×), because voltage is field times length.
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
In textbooks, channel length modulation in active mode usually is described using the Shichman–Hodges model, accurate only for old technology: [2] where = drain current, ′ = technology parameter sometimes called the transconductance coefficient, W, L = MOSFET width and length, = gate-to-source voltage, =threshold voltage, = drain-to-source voltage, =, and λ = channel-length modulation ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
The 1966 Autonetics DDA integrator was the first MOS large scale array (LSA) using four-phase logic. After producing the DDA and other MOS-LSA circuits, the team involved decided to design a general purpose computer suitable for navigation (sometimes called the MOS GP computer). The Autonetics D200 computer was built using MOS LSAs. [6] [7]
Used mainly to determine the minimum water depth for safe passage of a vessel and to calculate the vessel's displacement (obtained from ship's stability tables) so as to determine the mass of cargo on board. Draft, Air – Air Draft/Draught is the distance from the water line to the highest point on a ship (including antennas) while it is ...
Therefore, save as a 1200 dpi greyscale TIFF image and decrease the color depth to 2 bit (black and white) during image processing. Image processing (Photoshop or Irfan view): Add canvas of about 5% to each side (test it, usually around 30 pixels) (Photoshop: Image:Canvas Size, relative, 10% width, 10% height)